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A yield improvement methodology based on logic redundant repair with a repairable scan flip-flop designed by push rule.

, , , and . ISQED, page 184-190. IEEE, (2010)

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A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 43 (1): 96-108 (2008)A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). IEEE J. Solid State Circuits, 43 (1): 180-191 (2008)A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations., , , , , , , , , and 6 other author(s). ISSCC, page 326-606. IEEE, (2007)A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die., , , , , , , , , and 7 other author(s). ISSCC, page 488-617. IEEE, (2007)Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability., , , , , , , , and . ICCAD, page 398-405. IEEE Computer Society, (2005)A yield improvement methodology based on logic redundant repair with a repairable scan flip-flop designed by push rule., , , and . ISQED, page 184-190. IEEE, (2010)