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Disambiguation of "Lue, Hang-Ting"

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Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations.

, , , , , , , , , , , , , , , and . IEEE J. Solid State Circuits, 50 (6): 1491-1501 (2015)

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Lue Wu

Cummins Lue

M Tingart

Wen-tsi Ting

Hang Xu

 

Other publications of authors with the same name

Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations., , , , , , , , , and 6 other author(s). IEEE J. Solid State Circuits, 50 (6): 1491-1501 (2015)Chip Demonstration of a High-Density (43Gb) and High-Search-Bandwidth (300Gb/s) 3D NAND Based In-Memory Search Accelerator for Ternary Content Addressable Memory (TCAM) and Proximity Search of Hamming Distance., , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits., , , , , and . IMW, page 1-4. IEEE, (2021)Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution., , , , , , , , and . IRPS, page 1-6. IEEE, (2020)First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures., , , , , , , and . IRPS, page 7. IEEE, (2022)Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper)., , , and . IRPS, page 1-6. IEEE, (2020)State-of-the-art flash memory devices and post-flash emerging memories., , and . Sci. China Inf. Sci., 54 (5): 1039-1060 (2011)Design of Computing-in-Memory (CIM) with Vertical Split-Gate Flash Memory for Deep Neural Network (DNN) Inference Accelerator., , , , , and . ISCAS, page 1-4. IEEE, (2021)Microwave penetration depth measurement for high Tc superconductors by dielectric resonators., , and . IEEE Trans. Instrum. Meas., 51 (3): 433-439 (2002)Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances., , , , , and . IMW, page 1-4. IEEE, (2021)