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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors.

, , , и . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)

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Nathalie Mispagel

Nathalie Gusew

Nathalie Zatula

Nathalie Domanoldou

Nathalie Véron

 

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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , и . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , и . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , и . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress., , , , , , и . Microelectron. Reliab., (2016)Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications., , , , , и . IRPS, стр. 1-5. IEEE, (2023)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , и . ESSDERC, стр. 270-273. IEEE, (2012)Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors., , , , и . IRPS, стр. 4. IEEE, (2018)