( en | de | ru )

 

Disambiguation of "Labat, Nathalie"

Author of the publication

copydeleteadd this publication to your clipboard
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.

, , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Vincent Labatut

Ernst Labatzki

Nathalie Mispagel

Nathalie Schmitz

Nathalie Zatula

 

Other publications of authors with the same name

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress., , , , , , and . Microelectron. Reliab., (2016)On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise., , , , and . Microelectron. Reliab., 44 (9-11): 1387-1392 (2004)Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis., , , and . Microelectron. Reliab., (2017)Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes., , , , , , and . Microelectron. Reliab., 55 (9-10): 1741-1745 (2015)Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors., , , , and . IRPS, page 4. IEEE, (2018)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , and . ESSDERC, page 270-273. IEEE, (2012)Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications., , , , , and . IRPS, page 1-5. IEEE, (2023)