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Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators., , , , , , и . Microelectron. Reliab., (2016)Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs., , , , , , , и . ESSDERC, стр. 334-337. IEEE, (2012)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , и . ESSDERC, стр. 166-169. IEEE, (2018)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , и . ESSDERC, стр. 142-145. IEEE, (2016)In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications., , , , , и . ESSDERC, стр. 257-260. IEEE, (2022)Noise-induced dynamic variability in nano-scale CMOS SRAM cells., , , , и . ESSDERC, стр. 256-259. IEEE, (2016)Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs., , , , , и . ESSDERC, стр. 214-217. IEEE, (2014)Inter-tier Coupling Analysis in Back-illuminated Monolithic 3DSI Image Sensor Pixels., , , , и . MOCAST, стр. 1-4. IEEE, (2021)VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits., , и . ESSDERC, стр. 247-250. IEEE, (2021)"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs., , и . IRPS, стр. 1-5. IEEE, (2021)