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Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology., , , and . ISCAS, page 1-5. IEEE, (2018)C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory., , , , and . CoRR, (2022)Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors., , , , , , , and . ICECS, page 229-232. IEEE, (2019)Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays., , , and . ISCAS, page 1-5. IEEE, (2020)FeFET based Logic-in-Memory: an overview., , , , , and . DTIS, page 1-6. IEEE, (2021)Adoption of 2T2C ferroelectric memory cells for logic operation., , , , , and . ICECS, page 791-794. IEEE, (2019)Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices., , , , , , , , , and 2 other author(s). VLSI-SoC, page 180-183. IEEE, (2018)Computing with ferroelectric FETs: Devices, models, systems, and applications., , , , , , , , , and 9 other author(s). DATE, page 1289-1298. IEEE, (2018)Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory., , , , , , , , and . ESSDERC, page 118-121. IEEE, (2019)