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Localized thermal effects in Gate-all-around devices., , , , , , and . IRPS, page 1-5. IEEE, (2023)Novel Re-configurable Circuits For Aging Characterization: Connecting Devices to Circuits., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Modeling Framework for Transistor Aging Playback in Advanced Technology Nodes., , , , , and . IRPS, page 1-6. IEEE, (2020)Transistor reliability characterization and modeling of the 22FFL FinFET technology., , , , , , , , , and 6 other author(s). IRPS, page 6. IEEE, (2018)Machine Learning On Transistor Aging Data: Test Time Reduction and Modeling for Novel Devices., , , , and . IRPS, page 1-9. IEEE, (2021)A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies., , , , , , , and . IRPS, page 1-6. IEEE, (2023)Method to evaluate off-state breakdown in scaled Tri-gate technologies., , , , , and . IRPS, page 1-6. IEEE, (2022)A Unified Aging Model Framework Capturing Device to Circuit Degradation for Advance Technology Nodes., , , , , , and . IRPS, page 1-4. IEEE, (2023)Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology., , , , , , and . IRPS, page 1-5. IEEE, (2023)Novel Cell Architectures with Back-side Transistor Contacts for Scaling and Performance., , , , , , , , , and 22 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)