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Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

, , , , , , , , , , and . IRPS, page 2. IEEE, (2018)

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NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification., , , , and . Microelectron. Reliab., (2018)New insights on the PBTI phenomena in SiON pMOSFETs., , , , , , and . Microelectron. Reliab., 52 (9-10): 1891-1894 (2012)Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs., , , and . IRPS, page 1-6. IEEE, (2020)Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI., , , , and . ESSDERC, page 218-221. IEEE, (2018)Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs., , , , and . IRPS, page 3. IEEE, (2018)From Device Aging Physics to Automated Circuit Reliability Sign Off., , , , , , and . IRPS, page 1-12. IEEE, (2019)Degradation and recovery of variability due to BTI., , , , , and . Microelectron. Reliab., (2016)Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors., , , , , , , , , and 1 other author(s). IRPS, page 2. IEEE, (2018)On the temperature and voltage dependence of short-term negative bias temperature stress., , , and . Microelectron. Reliab., 49 (9-11): 1013-1017 (2009)