( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Impacts of 3-D integration processes on device reliabilities in thinned DRAM chip for 3-D DRAM.

, , , , , и . IRPS, стр. 4. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Tetsu Kudo

Masao Tanaka

Masafumi Tanaka

Shin Tanaka

Shu Tanaka

 

Другие публикации лиц с тем же именем

Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSix for via-last TSV technology., , , , , и . 3DIC, стр. 1-4. IEEE, (2016)Advanced 2.5D/3D hetero-integration technologies at GINTI, Tohoku University., , , , и . 3DIC, стр. FS2.1-FS2.5. IEEE, (2015)A study on multipath propagation characteristics for RAKE receiving technique.. PIMRC, стр. 711-714. (1994)Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer Heterogeneous 3D System Integration., , , , , , , , и . Micromachines, 7 (10): 184 (2016)Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last., , , , , , , , и . 3DIC, стр. 1-4. IEEE, (2023)A parallel ADC for high-speed CMOS image processing system with 3D structure., , , , , , и . 3DIC, стр. 1-4. IEEE, (2009)Micro-Raman spectroscopy analysis and capacitance - time (C-t) measurement of thinned silicon substrates for 3D integration., , , , , , , , и . 3DIC, стр. 1-5. IEEE, (2009)Investigation of the Underfill with Negative-Thermal-Expansion Material to Suppress Mechanical Stress in 3D Integration System., , и . 3DIC, стр. 1-4. IEEE, (2019)Impacts of Deposition Temperature and Annealing Condition on Ozone-Ethylene Radical Generation-TEOS-CVD SiO2 for Low-Temperature TSV Liner Formation., , , , , , , и . 3DIC, стр. 1-4. IEEE, (2019)Consideration of microbump layout for reduction of local bending stress due to CTE Mismatch in 3D IC., , , , , , , и . 3DIC, стр. TS8.26.1-TS8.26.4. IEEE, (2015)