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Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment.

, , , and . Microelectron. Reliab., (2016)

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Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment., , , and . Microelectron. Reliab., (2016)Multi-scale Simulation Methodology for Stress Assessment in 3D IC: Effect of Die Stacking on Device Performance., , , , , , and . J. Electron. Test., 28 (1): 63-72 (2012)Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects., , , , , , and . IRPS, page 1-5. IEEE, (2021)Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments., , , , , , , , , and 2 other author(s). ESSDERC, page 178-181. IEEE, (2018)Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation., , , , , , , , , and 3 other author(s). IRPS, page 5. IEEE, (2018)Nanoindentation to investigate IC stability using ring oscillator circuits as a CPI sensor., , , , , , and . IRPS, page 1-6. IEEE, (2020)Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration., , , , , , and . Microelectron. Reliab., 54 (9-10): 1959-1962 (2014)Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling., , , , , , and . IRPS, page 4. IEEE, (2018)