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Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers., , , , , , , and . IEICE Trans. Electron., 100-C (5): 417-423 (2017)W-band ultra-high data-rate 65nm CMOS wireless transceiver., , , , , , , , and . ASP-DAC, page 5-6. IEEE, (2017)A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver., , , , , , , , , and 2 other author(s). ISSCC, page 168-170. IEEE, (2018)13.3 A 56Gb/s W-band CMOS wireless transceiver., , , , , , , , , and 8 other author(s). ISSCC, page 242-243. IEEE, (2016)Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis., , , , , , , , and . IEICE Trans. Electron., 98-C (12): 1112-1119 (2015)300-GHz Amplifier in 75-nm InP HEMT Technology., , , , , , , , , and . IEICE Trans. Electron., 99-C (5): 528-534 (2016)Fast atom bombardment onto vertically aligned multi-walled carbon nanotube bumps to achieve low interconnect resistance with Au layer., , , , , and . Microelectron. Reliab., 55 (12): 2560-2564 (2015)