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Comparative Area and Parasitics Analysis in FinFET and Heterojunction Vertical TFET Standard Cells., , , , , , и . ACM J. Emerg. Technol. Comput. Syst., 12 (4): 38:1-38:23 (2016)Ferroelectric Transistor based Non-Volatile Flip-Flop., , , , , и . ISLPED, стр. 10-15. ACM, (2016)Computational paradigms using oscillatory networks based on state-transition devices., , , , и . IJCNN, стр. 3415-3422. IEEE, (2017)A defect-aware approach for mapping reconfigurable Single-Electron Transistor arrays., , , , , и . ASP-DAC, стр. 118-123. IEEE, (2015)Ferroelectrics: From Memory to Computing., , и . ASP-DAC, стр. 401-406. IEEE, (2020)On the potential of correlated materials in the design of spin-based cross-point memories (Invited)., , , и . ISCAS, стр. 1158-1161. IEEE, (2016)Connecting spectral techniques for graph coloring and eigen properties of coupled dynamics: A pathway for solving combinatorial optimizations (Invited paper)., , , , и . ICCAD, стр. 800-804. IEEE, (2017)FerroElectronics for Edge Intelligence., , , , и . IEEE Micro, 40 (6): 33-48 (2020)Exploiting Heterogeneity for Energy Efficiency in Chip Multiprocessors., , , , , и . IEEE J. Emerg. Sel. Topics Circuits Syst., 1 (2): 109-119 (2011)Tunnel FET technology: A reliability perspective., , и . Microelectron. Reliab., 54 (5): 861-874 (2014)