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Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference.

, , , , , and . Sensors, 13 (12): 17265-17280 (2013)

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Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference., , , , , and . Sensors, 13 (12): 17265-17280 (2013)On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime., , and . ESSDERC, page 246-249. IEEE, (2012)Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer., , , , , , and . Microelectron. Reliab., 51 (2): 326-331 (2011)Variability of UTBB MOSFET analog figures of merit in wide frequency range., , , , , , , and . ESSDERC, page 222-225. IEEE, (2014)Characterization and modelling of single event transients in LDMOS-SOI FETs., , , and . Microelectron. Reliab., 51 (9-11): 2004-2009 (2011)Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets., , , , , and . ESSDERC, page 194-197. IEEE, (2013)Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs., , , and . Microelectron. J., 38 (3): 321-326 (2007)Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs., , , and . Microelectron. Reliab., 50 (9-11): 1852-1856 (2010)High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs., , , , , , , , and . Microelectron. Reliab., 52 (1): 118-123 (2012)Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications., , , , , , , , and . ESSDERC, page 236-239. IEEE, (2017)