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Scalable High Voltage CMOS technology for Smart Power and sensor applications., , , , , , , , , and . Elektrotech. Informationstechnik, 125 (4): 109-117 (2008)Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor., , , and . Microelectron. Reliab., 47 (9-11): 1439-1443 (2007)Interface traps density-of-states as a vital component for hot-carrier degradation modeling., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 50 (9-11): 1267-1272 (2010)Building interchangeable black-box models of integrated circuits for EMC simulations., , , , and . EMC Compo, page 258-263. IEEE, (2015)Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors., , , , , , and . IET Circuits Devices Syst., 2 (3): 347-353 (2008)Towards probabilistic analog behavioral modeling., , , , , and . ISCAS, page 2728-2731. IEEE, (2015)Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures., , , , and . Microelectron. Reliab., 47 (4-5): 697-699 (2007)FlexRay transceiver in a 0.35 µm CMOS high-voltage technology., , , , , , , , and . DATE Designers' Forum, page 201-205. European Design and Automation Association, Leuven, Belgium, (2006)