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Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, and T. Grasser. Microelectron. Reliab., 50 (9-11): 1267-1272 (2010)

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Mun Jong Su

Jong-Mi Park

Hyun-Jong Park

Sey Jong Park

Jong-Oh Park

Other publications of authors with the same name

Evolution of a CMOS Based Lateral High Voltage Technology Concept.M. Knaipp, J. Park, and V. Vescoli. Microelectron. J., 37 (3): 243-248 (2006)Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.V. Vescoli, J. Park, H. Enichlmair, M. Knaipp, G. Röhrer, R. Minixhofer, and M. Schrems. IET Circuits Devices Syst., 2 (3): 347-353 (2008)Interface traps density-of-states as a vital component for hot-carrier degradation modeling.S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J. Park, H. Enichlmair, M. Karner, C. Kernstock and 4 other author(s). Microelectron. Reliab., 50 (9-11): 1267-1272 (2010)Optical sensor process variability in a 0.18 μm high voltage CMOS technology.F. Roger, A. Singulani, and J. Park. PATMOS, page 1-6. IEEE, (2017)An analytical approach for physical modeling of hot-carrier induced degradation.S. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J. Park, E. Seebacher, R. de Orio, H. Ceric, and T. Grasser. Microelectron. Reliab., 51 (9-11): 1525-1529 (2011)Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor.H. Enichlmair, S. Carniello, J. Park, and R. Minixhofer. Microelectron. Reliab., 47 (9-11): 1439-1443 (2007)A method for generating structurally aligned grids for semiconductor device simulation.C. Heitzinger, A. Sheikholeslami, J. Park, and S. Selberherr. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 24 (10): 1485-1491 (2005)Improving SiC lateral DMOSFET reliability under high field stress.T. Ayalew, A. Gehring, J. Park, T. Grasser, and S. Selberherr. Microelectron. Reliab., 43 (9-11): 1889-1894 (2003)High-voltage lateral trench gate SOI-LDMOSFETs.J. Park, R. Klima, and S. Selberherr. Microelectron. J., 35 (3): 299-304 (2004)

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Disambiguation of "Park, Jong Mun"

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Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

Please choose a person to relate this publication to

Mun Jong Su

Jong-Mi Park

Hyun-Jong Park

Sey Jong Park

Jong-Oh Park

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Park, Jong Mun"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

Please choose a person to relate this publication to

Mun Jong Su

Jong-Mi Park

Hyun-Jong Park

Sey Jong Park

Jong-Oh Park

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Interface traps density-of-states as a vital component for hot-carrier degradation modeling.