From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Doped GeSe materials for selector applications., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 168-171. IEEE, (2017)MTJ degradation in SOT-MRAM by self-heating-induced diffusion., , , , , , , и . IRPS, стр. 4. IEEE, (2022)Device-Aware Test for Back-Hopping Defects in STT-MRAMs., , , , , , , , и . DATE, стр. 1-6. IEEE, (2023)Modeling and spectroscopy of ovonic threshold switching defects., , , , , , и . IRPS, стр. 1-5. IEEE, (2021)Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode., , , , , , , , , и 3 other автор(ы). VLSI Technology and Circuits, стр. 312-313. IEEE, (2022)Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories., , , , , , , , , и . VLSI Technology and Circuits, стр. 375-376. IEEE, (2022)Characterization, Modeling and Test of Synthetic Anti-Ferromagnet Flip Defect in STT-MRAMs., , , , , и . ITC, стр. 1-10. IEEE, (2020)Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications., , , , , , , , , и 2 other автор(ы). DAC, стр. 13. ACM, (2019)Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach., , , , , , , , , и 7 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Variation-Aware Physics-Based Electromigration Modeling and Experimental Calibration for VLSI Interconnects., , , , , , , и . IRPS, стр. 1-6. IEEE, (2019)