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Step tunneling-enhanced hot-electron injection in vertical graphene base transistors.

, , , , , , and . ESSDERC, page 198-201. IEEE, (2015)

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Step tunneling-enhanced hot-electron injection in vertical graphene base transistors., , , , , , and . ESSDERC, page 198-201. IEEE, (2015)Flexible Top-Gated Monolayer MoS2 Transistors with High Mobility., , , , , and . DRC, page 229-230. IEEE, (2019)Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry., , , , and . DRC, page 1-2. IEEE, (2018)An integration approach for graphene double-gate transistors., , , , , , , , and . ESSDERC, page 250-253. IEEE, (2012)Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors., , , , , , and . ESSDERC, page 172-175. IEEE, (2015)PDMS-supported graphene transfer using intermediary polymer layers., , , , and . ESSDERC, page 309-312. IEEE, (2014)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , and . IRPS, page 2. IEEE, (2015)Process-Induced Anomalous Current Transport in Graphene/InA1N/GaN Heterostructured Diodes., , , , , and . IRPS, page 1-6. IEEE, (2019)