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Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.

C. Wilhelmer, M. Jech, D. Waldhoer, A. El-Sayed, L. Cvitkovich, and T. Grasser. ESSDERC, page 243-246. IEEE, (2021)

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Andreas Jechow

E Jecht

Ekkehard Jecht

Horst Jecht

Thomas Jechle

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Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.C. Wilhelmer, M. Jech, D. Waldhoer, A. El-Sayed, L. Cvitkovich, and T. Grasser. ESSDERC, page 243-246. IEEE, (2021)Physical modeling of the hysteresis in M0S2 transistors.T. Knobloch, G. Rzepa, Y. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. Furchi, T. Muller, and T. Grasser. ESSDERC, page 284-287. IEEE, (2017)Comphy - A compact-physics framework for unified modeling of BTI.G. Rzepa, J. Franco, B. O'Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl and 4 other author(s). Microelectron. Reliab., (2018)A Compact Physics Analytical Model for Hot-Carrier Degradation.S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, and B. Kaczer. IRPS, page 1-7. IEEE, (2020)Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.L. Cvitkovich, M. Jech, D. Waldhör, A. El-Sayed, C. Wilhelmer, and T. Grasser. ESSDERC, page 235-238. IEEE, (2021)Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.C. Wilhelmer, D. Waldhoer, M. Jech, A. El-Sayed, L. Cvitkovich, M. Waltl, and T. Grasser. ESSDERC, page 376-379. IEEE, (2022)Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.S. Tyaginov, A. Makarov, A. El-Sayed, A. Chasin, E. Bury, M. Jech, M. Vandemaele, A. Grill, A. Keersgieter, M. Vexler and 2 other author(s). IRPS, page 6. IEEE, (2022)Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.W. Goes, Y. Wimmer, A. El-Sayed, G. Rzepa, M. Jech, A. Shluger, and T. Grasser. Microelectron. Reliab., (2018)Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.D. Milardovich, M. Jech, D. Waldhoer, A. El-Sayed, and T. Grasser. ESSDERC, page 239-242. IEEE, (2021)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.A. Makarov, D. Linten, S. Tyaginov, B. Kaczer, P. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A. El-Sayed, M. Jech and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)

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Disambiguation of "Jech, Markus"

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Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.

Please choose a person to relate this publication to

Andreas Jechow

E Jecht

Ekkehard Jecht

Horst Jecht

Thomas Jechle

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Jech, Markus"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.

Please choose a person to relate this publication to

Andreas Jechow

E Jecht

Ekkehard Jecht

Horst Jecht

Thomas Jechle

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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Chicago
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Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.