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On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models.

, , , and . ESSDERC, page 277-280. IEEE, (2022)

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A self-sustaining Single Photon Avalanche Diode Model., , , , , , , , , and 5 other author(s). ESSDERC, page 281-284. IEEE, (2022)Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs., , , , , , , , , and 25 other author(s). ESSDERC, page 144-147. IEEE, (2023)Microscopic scale characterization and modeling of transistor degradation under HC stress., , , , , , , and . Microelectron. Reliab., 52 (11): 2513-2520 (2012)Integration of SPAD in 28nm FDSOI CMOS technology., , , , , , , , and . ESSDERC, page 82-85. IEEE, (2018)A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD., , , , , , , and . ESSDERC, page 424-427. IEEE, (2016)The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies., , , , , , , , and . ESSDERC, page 254-257. IEEE, (2014)Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study., , , , , , , , , and 2 other author(s). ESSCIRC, page 143-146. IEEE, (2021)Statistical measurements and Monte-Carlo simulations of DCR in SPADs., , , , , , , , , and 2 other author(s). ESSCIRC, page 193-196. IEEE, (2022)Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs., , , , , , , , , and 17 other author(s). ESSDERC, page 106-109. IEEE, (2014)On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models., , , and . ESSDERC, page 277-280. IEEE, (2022)