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The Future of Nanoelectronics: New Materials, Architectures and Devices.

. ISVLSI, page 446. IEEE Computer Society, (2015)

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Complementary III-V heterostructure tunnel FETs., , , , , and . ESSDERC, page 403-407. IEEE, (2016)Tunnel field-effect transistors as energy-efficient electronic switches., and . Nat., 479 (7373): 329-337 (2011)III-V semiconductor nanowires for future devices., , , , , , , , and . DATE, page 1-2. European Design and Automation Association, (2014)Benchmarking energy consumption and latency for neuromorphic computing in condensed matter and particle physics., , , , , , , , , and 3 other author(s). CoRR, (2022)Reversible and Controllable Switching of a Single-Molecule Junction, , , and . Small, 2 (8-9): 973--977 (2006)Influence of trapped and interfacial charges in organic multilayer light-emitting devices., , , , , and . IBM J. Res. Dev., 45 (1): 77-88 (2001)Quantum Dots Array on Ultra-Thin SOI Nanowires with Ferromagnetic Cobalt Barrier Gates for Enhanced Spin Qubit Control., , , , , , , , , and 3 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)The Future of Nanoelectronics: New Materials, Architectures and Devices.. ISVLSI, page 446. IEEE Computer Society, (2015)Quantum Computing Technology and Roadmap.. ESSDERC, page 25-30. IEEE, (2022)Ballistic transport and high thermopower in one-dimensional InAs nanowires., , , , , , , and . ESSDERC, page 341-344. IEEE, (2016)