( en | de | ru )

 

Disambiguation of "Weisshaupt, David"

Author of the publication

copydeleteadd this publication to your clipboard
Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD.

, , , , , and . MIPRO, page 43-47. IEEE, (2017)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Michael Weißhaupt

Winfried Weisshaupt

Alfred Weisshaupt

Petra Weißhaupt

Heinz Weisshaupt

 

Other publications of authors with the same name

Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , and . MIPRO, page 55-59. IEEE, (2021)Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics., , , , , , , , and . MIPRO, page 45-49. IEEE, (2021)Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy., , , , , , and . MIPRO, page 1-6. IEEE, (2019)Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD., , , , , and . MIPRO, page 43-47. IEEE, (2017)Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy., , , , , and . MIPRO, page 31-35. IEEE, (2021)Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates., , , , , , , , and . MIPRO, page 32-35. IEEE, (2018)MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate., , , , , , , , , and . MIPRO, page 50-54. IEEE, (2021)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy., , , , , , and . MIPRO, page 40-44. IEEE, (2021)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well., , , , , , , and . MIPRO, page 7-12. IEEE, (2019)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers., , , , , , , , , and . MIPRO, page 17-21. IEEE, (2020)