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Disambiguation of "Shibutani, Koji"

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A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology.

, , , , , , , , , , and . CICC, page 1-4. IEEE, (2012)

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Koji Kameo

Koji Onoda

Koji Ota

Tomoko Kojima

Hajime Kojima

 

Other publications of authors with the same name

FEOL/BEOL wear-out estimator using stress-to-frequency conversion of voltage/temperature-sensitive ring oscillators for 28nm automotive MCUs., , , , , and . ESSCIRC, page 265-268. IEEE, (2016)A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology., , , , , , , , , and 1 other author(s). CICC, page 1-4. IEEE, (2012)Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET., , , , , and . IRPS, page 1. IEEE, (2018)Assessment of reliability impact on GHz processors with moderate overdrive., , , , and . ISQED, page 456-460. IEEE, (2014)Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process., , , , , and . IRPS, page 1-6. IEEE, (2019)Wear-out stress monitor utilising temperature and voltage sensitive ring oscillators., , , , , and . IET Circuits Devices Syst., 12 (2): 182-188 (2018)An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology., , , , , and . ESSCIRC, page 112-115. IEEE, (2015)A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process., , , , , and . A-SSCC, page 195-196. IEEE, (2018)NBTI/PBTI separated BTI monitor with 4.2x sensitivity by standard cell based unbalanced ring oscillator., , , , and . A-SSCC, page 201-204. IEEE, (2017)Experimental Implementation of 8.9Kgate Stress Monitor in 28nm MCU Along with Safety Software Library for IoT Device Maintenance., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)