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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.

W. Sasangka, Y. Gao, C. Gan, and C. Thompson. Microelectron. Reliab., (2018)

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John Thompson

Christiane Thompson

Bambi Thompson

Peter Thompson

Richard Thompson

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Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.W. Sasangka, G. Syaranamual, Y. Gao, R. Made, C. Gan, and C. Thompson. Microelectron. Reliab., (2017)Methodology for electromigration critical threshold design rule evaluation.J. Clement, S. Riege, R. Cvijetic, and C. Thompson. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 18 (5): 576-581 (1999)Electromigration Reliability Comparison of Cu and Al Interconnects.S. Alam, F. Wei, C. Gan, C. Thompson, and D. Troxel. ISQED, page 303-308. IEEE Computer Society, (2005)Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing.W. Sasangka, G. Syaranamual, C. Gan, and C. Thompson. IRPS, page 6. IEEE, (2015)Characterisation of defects generated during constant current InGaN-on-silicon LED operation.R. Made, Y. Gao, G. Syaranamual, W. Sasangka, L. Zhang, X. Nguyen, Y. Tay, J. Herrin, C. Thompson, and C. Gan. Microelectron. Reliab., (2017)Circuit Level Reliability Analysis of Cu Interconnects.S. Alam, C. Gan, C. Thompson, and D. Troxel. ISQED, page 238-243. IEEE Computer Society, (2004)Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation.G. Syaranamual, W. Sasangka, R. Made, S. Arulkumaran, G. Ng, S. Foo, C. Gan, and C. Thompson. Microelectron. Reliab., (2016)Thermal aware cell-based full-chip electromigration reliability analysis.S. Alam, D. Troxel, and C. Thompson. ACM Great Lakes Symposium on VLSI, page 26-31. ACM, (2005)Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.W. Sasangka, Y. Gao, C. Gan, and C. Thompson. Microelectron. Reliab., (2018)Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations.S. Alam, C. Gan, C. Thompson, and D. Troxel. Microelectron. J., 38 (4-5): 463-473 (2007)

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Disambiguation of "Thompson, Carl V."

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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.

Please choose a person to relate this publication to

John Thompson

Christiane Thompson

Bambi Thompson

Peter Thompson

Richard Thompson

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Thompson, Carl V."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.

Please choose a person to relate this publication to

John Thompson

Christiane Thompson

Bambi Thompson

Peter Thompson

Richard Thompson

Other publications of authors with the same name

Disambiguation

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URL
DOI
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Chicago
DIN 1505
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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors.