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Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , and . ESSDERC, page 130-133. IEEE, (2017)Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs., , , , , , and . Microelectron. Reliab., 52 (9-10): 2220-2223 (2012)The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors., , , , , , , and . Microelectron. Reliab., (2018)Field and hot electron-induced degradation in GaN-based power MIS-HEMTs., , , , , , and . Microelectron. Reliab., (2017)µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate., , , , , , , , and . IRPS, page 1-6. IEEE, (2019)Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature., , , , , , , , and . IRPS, page 5. IEEE, (2022)Evidence for source side injection hot carrier effects on lateral DMOS transistors., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1621-1624 (2004)Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations., and . Microelectron. Reliab., 44 (9-11): 1625-1629 (2004)Integration of an SCR in an active clamp., and . Microelectron. Reliab., 47 (7): 1054-1059 (2007)