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Disambiguation of "Meneghini, Matteo"

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Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.

, , , , , , and . Microelectron. Reliab., (2017)

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Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Matteo Gabba

Marco Matteo

 

Other publications of authors with the same name

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)Charge Trapping in GaN Power Transistors: Challenges and Perspectives., , , , , , , , , and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , and . ICICDT, page 1-4. IEEE, (2015)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)"Hot-plugging" of LED modules: Electrical characterization and device degradation., , , , , , and . Microelectron. Reliab., 53 (9-11): 1524-1528 (2013)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Long-term degradation mechanisms of mid-power LEDs for lighting applications., , , , , and . Microelectron. Reliab., 55 (9-10): 1754-1758 (2015)Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics., , , and . Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate., , , , , , , , , and . Microelectron. Reliab., 53 (9-11): 1476-1480 (2013)