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Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing.

, , , and . Microelectron. Reliab., 55 (12): 2505-2510 (2015)

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A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation., , , , and . IEEE J. Solid State Circuits, 36 (1): 110-121 (2001)On the origin of dynamic Ron in commercial GaN-on-Si HEMTs., , , , and . Microelectron. Reliab., (2018)Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2017)Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , and . ESSDERC, page 130-133. IEEE, (2017)A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments., , , , , and . IEEE J. Solid State Circuits, 34 (7): 937-948 (1999)Impact of self-heating and thermal coupling on analog circuits in SOI CMOS., , , , and . IEEE J. Solid State Circuits, 33 (7): 1037-1046 (1998)Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence., , , , , , , , and . Microelectron. Reliab., 55 (12): 2493-2498 (2015)Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation., , , and . Microelectron. Reliab., 54 (12): 2650-2655 (2014)Development of an RF IV waveform based stress test procedure for use on GaN HFETs., , , and . Microelectron. Reliab., 52 (12): 2880-2883 (2012)Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing., , , and . Microelectron. Reliab., 55 (12): 2505-2510 (2015)