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Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells., , , , , , , , , and 9 other author(s). IRPS, page 1-9. IEEE, (2020)Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles, , , , , , , , and . Adv. Electron. Mater., 6 (3): 1901015 (Jan 29, 2020)CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures., , , , , and . ESSDERC, page 130-133. IEEE, (2018)Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , and 5 other author(s). IRPS, page 11-1. IEEE, (2022)Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2., , and . ICICDT, page 84-87. IEEE, (2022)Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2022)BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications., , , , , , , , , and 1 other author(s). NVMTS, page 1-4. IEEE, (2019)