Author of the publication

Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching.

, , , , , , and . ISDCS, page 1-4. IEEE, (2021)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs., , , , , , , , , and . IEICE Trans. Electron., 102-C (6): 487-494 (2019)Model Development for Robust Design of SOI-MOSFET Circuits used in Radiative Environments., , and . ISDCS, page 1-4. IEEE, (2021)Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation., , , , , , , and . IEEE Access, (2021)History Effect on Circuit Performance of SOI-MOSFETs., , , , , and . ISDCS, page 1-5. IEEE, (2020)Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching., , , , , , and . ISDCS, page 1-4. IEEE, (2021)Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation., , , , , and . ISDCS, page 1-4. IEEE, (2020)Compact modeling of dynamic trap density evolution for predicting circuit-performance aging., , , , , , and . Microelectron. Reliab., (2018)ACTAS: an accurate timing analysis system for VLSI., , , , and . DAC, page 152-158. ACM, (1985)Compact Modeling of Expansion Effects in LDMOS., , , , , , , , and . IEICE Trans. Electron., 95-C (11): 1817-1823 (2012)Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation., , , , , , and . IEICE Trans. Electron., 96-C (5): 744-751 (2013)