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Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2023)Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage., , , , , , , and . DRC, page 1-2. IEEE, (2020)Virtual-Source Modeling of N-polar GaN MISHEMTS., , , , , , , , , and 1 other author(s). BCICTS, page 1-4. IEEE, (2019)Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2019)Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects., , , , , , , , , and 3 other author(s). IRPS, page 5. IEEE, (2024)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , and 4 other author(s). IRPS, page 1-2. IEEE, (2021)A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2020)