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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

F. Chiocchetta, C. Calascione, C. Santi, C. Sharma, F. Rampazzo, X. Zheng, B. Romanczyk, M. Guidry, H. Li, S. Keller, U. Mishra, G. Meneghesso, M. Meneghini, and E. Zanoni. IRPS, page 1-2. IEEE, (2021)

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Giovanni Federigo De Santi

Santi Ontan̆ón

Santi Wattananusorn

Andrea Santi

Dominic Santi

Other publications of authors with the same name

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.F. Chiocchetta, C. Santi, F. Rampazzo, K. Mukherjee, J. Grünenpütt, D. Sommer, H. Blanck, B. Lambert, A. Gerosa, G. Meneghesso and 2 other author(s). IRPS, page 11. IEEE, (2022)Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.M. Avramenko, L. Schepper, J. Cano, F. Geenen, P. Moens, A. Marcuzzi, C. Santi, and M. Meneghini. IRPS, page 54. IEEE, (2024)Charge Trapping in GaN Power Transistors: Challenges and Perspectives.M. Meneghini, N. Modolo, A. Nardo, C. Santi, A. Minetto, L. Sayadi, C. Koller, S. Sicre, G. Prechtl, G. Meneghesso and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs.A. Cavaliere, C. Santi, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 17. IEEE, (2024)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Current crowding as a major cause for InGaN LED degradation at extreme high current density.N. Trivellin, M. Buffolo, C. Santi, E. Zanoni, G. Meneghesso, and M. Meneghini. IECON, page 1-6. IEEE, (2021)Degradation of vertical GaN FETs under gate and drain stress.M. Ruzzarin, M. Meneghini, C. Santi, G. Meneghesso, E. Zanoni, M. Sun, and T. Palacios. IRPS, page 4. IEEE, (2018)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests.Z. Gao, F. Chiocchetta, F. Rampazzo, C. Santi, M. Fornasier, G. Meneghesso, M. Meneghini, and E. Zanoni. IRPS, page 1-5. IEEE, (2023)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.F. Chiocchetta, C. Calascione, C. Santi, C. Sharma, F. Rampazzo, X. Zheng, B. Romanczyk, M. Guidry, H. Li, S. Keller and 4 other author(s). IRPS, page 1-2. IEEE, (2021)

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Disambiguation of "Santi, Carlo De"

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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Please choose a person to relate this publication to

Giovanni Federigo De Santi

Santi Ontan̆ón

Santi Wattananusorn

Andrea Santi

Dominic Santi

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Santi, Carlo De"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Please choose a person to relate this publication to

Giovanni Federigo De Santi

Santi Ontan̆ón

Santi Wattananusorn

Andrea Santi

Dominic Santi

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.