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Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.

C. Yadav, A. Dutta, S. Sirohi, E. Tamilmani, and Y. Chauhan. VLSID, page 328-333. IEEE Computer Society, (2016)

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Saurabh Sanatani

Saurabh Srivastava

Saurabh Bhavsar

Saurabh Ray

Saurabh Panjwani

Other publications of authors with the same name

Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs.S. Sirohi, B. Lim, A. Raman, and F. Anderson. BCICTS, page 82-85. IEEE, (2022)RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications.S. Parthasarathy, A. Trivedi, S. Sirohi, R. Groves, M. Olsen, Y. Chauhan, M. Carroll, D. Kerr, A. Tombak, and P. Mason. VLSI Design, page 194-199. IEEE Computer Society, (2010)Modeling of High Frequency Noise in SOI MOSFETs.M. Varadharajaperumal, S. Sirohi, S. Khandelwal, E. Tamilmani, and V. Subramanian. VLSI Design, page 212-217. IEEE Computer Society, (2010)BSIM6 - Benchmarking the Next-Generation MOSFET Model for RF Applications.A. Dutta, S. Sirohi, E. Tamilmani, H. Agarwal, Y. Chauhan, and R. Williams. VLSID, page 421-426. IEEE Computer Society, (2014)Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.U. Raghunathan, S. Sirohi, V. Ruparelia, P. Sharma, D. Ioannou, V. Jain, H. Kakara, S. Gedela, V. Vanukuru, P. Dongmo and 24 other author(s). BCICTS, page 232-235. IEEE, (2022)Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.C. Yadav, A. Dutta, S. Sirohi, E. Tamilmani, and Y. Chauhan. VLSID, page 328-333. IEEE Computer Society, (2016)Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications.S. Sirohi, V. Jain, A. Raman, B. Nukala, E. Veeramani, J. Adkisson, and A. Joseph. BCICTS, page 182-185. IEEE, (2018)Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers.P. Sharma, V. Ruparelia, S. Sirohi, U. Raghunathan, V. Vanukuru, and V. Jain. BCICTS, page 167-170. IEEE, (2023)Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT.B. Lim, A. Raman, and S. Sirohi. BCICTS, page 50-53. IEEE, (2023)

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Disambiguation of "Sirohi, Saurabh"

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Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.

Please choose a person to relate this publication to

Saurabh Sanatani

Saurabh Srivastava

Saurabh Bhavsar

Saurabh Ray

Saurabh Panjwani

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Sirohi, Saurabh"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.

Please choose a person to relate this publication to

Saurabh Sanatani

Saurabh Srivastava

Saurabh Bhavsar

Saurabh Ray

Saurabh Panjwani

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.