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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, S. Sutar, L. Magnarin, U. Celano, H. Puliyalil, S. Kundu, M. Pak, L. Teugels, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, and G. Kar. VLSI Technology and Circuits, page 292-293. IEEE, (2022)

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Hubert Gabel

Tobias Hubert

Thomas Hübert

Hubert Marxreiter

Hubert Klima

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Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM.K. Garello, F. Yasin, H. Hody, S. Couet, L. Souriau, S. Sharifi, J. Swerts, R. Carpenter, S. Rao, W. Kim and 7 other author(s). VLSI Circuits, page 194-. IEEE, (2019)Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.T. Ravsher, D. Garbin, A. Fantini, R. Degraeve, S. Clima, G. Donadio, S. Kundu, H. Hody, W. Devulder, J. Houdt and 3 other author(s). VLSI Technology and Circuits, page 312-313. IEEE, (2022)Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.T. Ravsher, A. Fantini, A. Chasin, S. Sharifi, H. Hody, H. Dekkers, T. Witters, J. Houdt, V. Afanas'ev, S. Couet and 1 other author(s). IRPS, page 10-1. IEEE, (2022)Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability.T. Ravsher, S. Sharifi, A. Fantini, H. Hody, T. Witters, D. Garbin, R. Degraeve, V. Afanas'ev, J. Houdt, L. Goux and 2 other author(s). IMW, page 1-4. IEEE, (2021)Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory.T. Ravsher, R. Degraeve, D. Garbin, S. Clima, A. Fantini, G. Donadio, S. Kundu, W. Devulder, H. Hody, G. Potoms and 4 other author(s). IRPS, page 7. IEEE, (2024)Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications.S. Rao, K. Cai, G. Talmelli, N. Franchina-Vergel, W. Janssens, H. Hody, F. Yasin, K. Wostyn, and S. Couet. IMW, page 1-4. IEEE, (2023)Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, K. Banerjee, H. Puliyalil and 10 other author(s). ICICDT, page 88. IEEE, (2022)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, S. Sutar, L. Magnarin and 14 other author(s). VLSI Technology and Circuits, page 292-293. IEEE, (2022)

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Disambiguation of "Hody, Hubert"

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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

Please choose a person to relate this publication to

Hubert Gabel

Tobias Hubert

Thomas Hübert

Hubert Marxreiter

Hubert Klima

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hody, Hubert"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

Please choose a person to relate this publication to

Hubert Gabel

Tobias Hubert

Thomas Hübert

Hubert Marxreiter

Hubert Klima

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.