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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, S. Sutar, L. Magnarin, U. Celano, H. Puliyalil, S. Kundu, M. Pak, L. Teugels, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, and G. Kar. VLSI Technology and Circuits, page 292-293. IEEE, (2022)

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Jozef Dekkers

Heiko Dekkers

Harold Rüdiger

Harold Green

Harold Konschegg

Other publications of authors with the same name

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices.Y. Zhao, P. Rinaudo, A. Chasin, B. Truijen, B. Kaczer, N. Rassoul, H. Dekkers, A. Belmonte, I. Wolf, G. Kar and 1 other author(s). IRPS, page 1-7. IEEE, (2024)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, S. Sutar, L. Magnarin and 14 other author(s). VLSI Technology and Circuits, page 292-293. IEEE, (2022)Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.A. Belmonte, S. Kundu, S. Subhechha, A. Chasin, N. Rassoul, H. Dekkers, H. Puliyalil, F. Seidel, P. Carolan, R. Delhougne and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. van Setten, A. Chasin, S. Sharifi, K. Banerjee, H. Puliyalil and 10 other author(s). ICICDT, page 88. IEEE, (2022)Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.P. Rinaudo, A. Chasin, Y. Zhao, B. Kaczer, N. Rassoul, H. Dekkers, M. van Setten, A. Belmonte, I. Wolf, G. Kar and 1 other author(s). IRPS, page 1-6. IEEE, (2024)Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.T. Ravsher, A. Fantini, A. Chasin, S. Sharifi, H. Hody, H. Dekkers, T. Witters, J. Houdt, V. Afanas'ev, S. Couet and 1 other author(s). IRPS, page 10-1. IEEE, (2022)

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Disambiguation of "Dekkers, Harold"

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Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

Please choose a person to relate this publication to

Jozef Dekkers

Heiko Dekkers

Harold Rüdiger

Harold Green

Harold Konschegg

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Dekkers, Harold"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

Please choose a person to relate this publication to

Jozef Dekkers

Heiko Dekkers

Harold Rüdiger

Harold Green

Harold Konschegg

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.