Author of the publication

Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs.

, , , , and . Microelectron. Reliab., 52 (9-10): 1918-1923 (2012)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Statistical NBTI-effect prediction for ULSI circuits., , , and . ISCAS, page 2494-2497. IEEE, (2010)Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part I: CNFET Transistor Optimization., , , , , , , , , and 2 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 30 (4): 432-439 (2022)ICMAT 2011 - Reliability and variability of semiconductor devices and ICs., , , , and . Microelectron. Reliab., 52 (8): 1531 (2012)A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices., , and . VLSI Design, 6 (1-4): 243-246 (1998)Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices., , , and . VLSI Design, 6 (1-4): 91-95 (1998)Ab-initio Coulomb Scattering in Atomistic Device Simulation., , and . VLSI Design, 8 (1-4): 331-335 (1998)Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs., , , and . VLSI Design, 13 (1-4): 169-173 (2001)RF Performance of Si/SiGe MODFETs: A Simulation Study., , , , and . VLSI Design, 8 (1-4): 325-330 (1998)Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET., , , , , and . Microelectron. Reliab., 48 (8-9): 1572-1575 (2008)Special section reliability and variability of devices for circuits and systems., , , , and . Microelectron. Reliab., 54 (6-7): 1057 (2014)