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Disambiguation of "Zhang, Jishen"

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First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.

, , , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Zhang Zhang

Meng Zhang

Methods and implementations of road-network matching. TU München, (2009)

Yue Zhang

Ning Zhang

Gang Zhang

 

Other publications of authors with the same name

First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection., , , , , , , , , and 3 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices., , , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Novel Field-Plate Integrated Mesa-Type InGaAs/InP Avalanche Photodiode., , , , , , and . ICICDT, page 48-50. IEEE, (2022)First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit., , , , , , , , , and 3 other author(s). VLSI Technology and Circuits, page 405-406. IEEE, (2022)Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)., , , , , , , , , and 1 other author(s). VLSI Technology and Circuits, page 294-295. IEEE, (2022)First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform., , , , , , , , , and 6 other author(s). VLSI Technology and Circuits, page 409-410. IEEE, (2022)First Monolithic Integration of Group IV Waveguide Photodetectors and Modulators on 300 mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit., , , , , , and . VLSI Technology and Circuits, page 407-408. IEEE, (2022)300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures., , , , , and . VLSI Technology and Circuits, page 367-368. IEEE, (2022)First Demonstration of Waveguide-Coupled Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on the SOI Platform for 2-μm Wavelength Optoelectronic Integrated Circuit., , , , , and . VLSI Circuits, page 1-2. IEEE, (2021)