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Issues and Key Technologies for Next Generation 3D NAND., , , , and . ICEIC, page 1-4. IEEE, (2021)A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface., , , , , , , , , and 34 other author(s). ISSCC, page 426-428. IEEE, (2021)A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface., , , , , , , , , and 39 other author(s). ISSCC, page 216-218. IEEE, (2019)A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology., , , , , , , , , and 27 other author(s). ISSCC, page 430-432. IEEE, (2012)A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage., , , , , , , , , and 12 other author(s). IEEE J. Solid State Circuits, 56 (4): 1129-1140 (2021)Integrated Circuit to Compensate Parasitic Leakage Component for WL Leakage Current in NAND Flash Memory., , , , , , and . A-SSCC, page 1-3. IEEE, (2023)A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface., , , , , , , , , and 3 other author(s). A-SSCC, page 1-2. IEEE, (2021)A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package., , , , , , , , , and 20 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface., , , , , , , , , and 24 other author(s). ISSCC, page 136-137. IEEE, (2022)A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems., , , , , , , , , and 16 other author(s). VLSI Circuits, page 1-2. IEEE, (2020)