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Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , and . ESSDERC, page 160-163. IEEE, (2017)Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories., , , , , , and . DRC, page 207-208. IEEE, (2019)Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields., , , , , and . NVMTS, page 1-8. IEEE, (2019)Analog Content-Addressable Memory from Complementary FeFETs., , , , , , , , and . CoRR, (2023)Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide., , and . DRC, page 1-2. IEEE, (2022)Embedding hafnium oxide based FeFETs in the memory landscape., , and . ICICDT, page 121-124. IEEE, (2018)Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories., , , , , and . IRPS, page 1-6. IEEE, (2021)High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application., , , , , , , , , and 5 other author(s). IMW, page 1-3. IEEE, (2021)Reliability aspects of Hf-based capacitors: Breakdown and trapping effects., , , , , and . Microelectron. Reliab., 47 (4-5): 497-500 (2007)Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories., , , , , , , , and . ESSDERC, page 260-263. IEEE, (2013)