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Disambiguation of "Suemitsu, Tetsuya"

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Site-Selective Epitaxy of Graphene on Si Wafers.

, , , , , , , , , , , and . Proc. IEEE, 101 (7): 1557-1566 (2013)

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Tetsuya Takahashi

Tetsuya Mizutani

Tetsuya Kawata

Tetsuya Takahashi

Tetsuya Tokano

 

Other publications of authors with the same name

InP and GaN high electron mobility transistors for millimeter-wave applications.. IEICE Electron. Express, 12 (13): 20152005 (2015)Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs., , , , and . Microelectron. Reliab., 42 (1): 47-52 (2002)Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems., , , , and . IEICE Trans. Electron., 93-C (8): 1286-1289 (2010)An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets., , , and . IEICE Electron. Express, 3 (7): 129-135 (2006)Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band., , , , , , , , , and 7 other author(s). ESSDERC, page 318-321. IEEE, (2013)Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal., , , , , , , , and . OFC, page 1-3. IEEE, (2023)Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate., , , , , and . IEICE Electron. Express, 3 (13): 310-315 (2006)Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network., , , , , , , , , and 5 other author(s). ECOC, page 1-3. IEEE, (2015)InP HEMT Technology for High-Speed Logic and Communications., and . IEICE Trans. Electron., 90-C (5): 917-922 (2007)High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique., , , , , , and . Proc. IEEE, 101 (7): 1603-1608 (2013)