From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 182-185. IEEE, (2014)PBTI for N-type tunnel FinFETs., , , , , , , , , и 4 other автор(ы). ICICDT, стр. 1-4. IEEE, (2015)A 0.3-V 1-µW Super-Regenerative Ultrasound Wake-Up Receiver With Power Scalability., , и . IEEE Trans. Circuits Syst. II Express Briefs, 64-II (9): 1027-1031 (2017)Power-efficient gray-scale control of silicon thermo-optic phase shifters by pulse width modulation using monolithically integrated MOSFET., , , , , , , , , и 6 other автор(ы). OFC, стр. 1-3. IEEE, (2015)Image-Classifier Deep Convolutional Neural Network Training by 9-bit Dedicated Hardware to Realize Validation Accuracy and Energy Efficiency Superior to the Half Precision Floating Point Format., , , , , , и . ISCAS, стр. 1-5. IEEE, (2018)Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET., , , , , , , , , и 1 other автор(ы). CICC, стр. 1-4. IEEE, (2010)Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 202-205. IEEE, (2013)Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 278-281. IEEE, (2014)Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology., , , , , , , , и . CICC, стр. 33-36. IEEE, (2007)FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction., , , , , , , , и . IEICE Trans. Electron., 91-C (4): 534-542 (2008)