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Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory., , , , , , , , , and . IRPS, page 1-6. IEEE, (2021)Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks., , , , , , , , , and . ICECS, page 561-564. IEEE, (2018)Innovative GeS2/Sb2Te3 based phase change memory for low power applications., , , , , , , , , and 3 other author(s). NVMTS, page 1-4. IEEE, (2017)Current pulse generator for multilevel cell programming of innovative PCM., , , , and . ICICDT, page 1-4. IEEE, (2015)Phase Change and Magnetic Memories for Solid-State Drive Applications., , , , and . Proc. IEEE, 105 (9): 1790-1811 (2017)Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction., , , , , , , , , and 3 other author(s). ESSDERC, page 233-236. IEEE, (2022)Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement., , , , , , , , , and 6 other author(s). ESSDERC, page 225-228. IEEE, (2022)1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation., , , , , , , , , and 6 other author(s). MIXDES, page 1-6. IEEE, (2023)OTS selector devices: Material engineering for switching performance., , , , , , , , and . ICICDT, page 113-116. IEEE, (2018)PCM-Trace: Scalable Synaptic Eligibility Traces with Resistivity Drift of Phase-Change Materials., , , , , , , and . ISCAS, page 1-5. IEEE, (2021)