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Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions.

A. Elsayed, and J. Schulze. MIPRO, page 7-11. IEEE, (2018)

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Jörg Schulze

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MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate.D. Schwarz, S. Schäfer, L. Seidel, H. Funk, D. Weißhaupt, M. Oehme, V. Schlykow, V. Kiyek, D. Buca, and J. Schulze. MIPRO, page 50-54. IEEE, (2021)Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.E. Sigle, D. Weißhaupt, M. Oehme, H. Funk, D. Schwarz, F. Berkmann, and J. Schulze. MIPRO, page 40-44. IEEE, (2021)Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.M. Dettling, D. Weißhaupt, H. Funk, M. Kern, F. Berkmann, C. Clausen, M. Oehme, D. Schwarz, J. van Slageren, and J. Schulze. MIPRO, page 17-21. IEEE, (2020)Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well.P. Povolni, D. Schwarz, C. Clausen, Y. Elogail, H. Funk, M. Oehme, D. Weißhaupt, and J. Schulze. MIPRO, page 7-12. IEEE, (2019)Electrical Characterization of pure Boron-on-Germanium pin Diodes.L. Gebert, D. Schwarz, A. Elsayed, and J. Schulze. MIPRO, page 13-18. IEEE, (2019)Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si.Y. Elogail, F. Berkmann, C. Clausen, I. Fischer, L. Hänel, D. Schwarz, and J. Schulze. Microelectron. J., (2022)Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy.H. Funk, D. Weißhaupt, D. Schwarz, D. Bloos, J. van Slageren, and J. Schulze. MIPRO, page 31-35. IEEE, (2021)Electroluminescence of SixGe1-x-ySny/Ge1-ySny pin-Diodes Grown on a GeSn Buffer.L. Seidel, S. Schäfer, M. Oehme, D. Buca, G. Capellini, J. Schulze, and D. Schwarz. ESSCIRC, page 165-168. IEEE, (2022)GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection.M. Wanitzek, M. Oehme, C. Spieth, D. Schwarz, L. Seidel, and J. Schulze. ESSCIRC, page 169-172. IEEE, (2022)Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C.T. Knezevic, T. Suligoj, X. Liu, L. Nanver, A. Elsayed, J. Dick, and J. Schulze. ESSDERC, page 242-245. IEEE, (2019)

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Disambiguation of "Schulze, Jörg"

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Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions.

Please choose a person to relate this publication to

Jörg Schulze

Jörg Schulze

Jörg Schulze

Jörg Schulze

Jörg Schulze

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Schulze, Jörg"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions.

Please choose a person to relate this publication to

Jörg Schulze

Jörg Schulze

Jörg Schulze

Jörg Schulze

Jörg Schulze

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions.