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Impact of stress-induced backflow on full-chip electromigration risk assessment., , , , , и . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 25 (6): 1038-1046 (2006)Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 178-181. IEEE, (2018)RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-6. IEEE, (2021)RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications., , , , , , , , , и 5 other автор(ы). IRPS, стр. 1-6. IEEE, (2023)Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects., , , , , , и . IRPS, стр. 1-5. IEEE, (2021)Empirical BEOL-TDDB evaluation based on I(t)-trace analysis., , , и . Microelectron. Reliab., 54 (9-10): 1671-1674 (2014)Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal., , , , , , , , , и 6 other автор(ы). OFC, стр. 1-3. IEEE, (2023)Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation., , , , , , , , , и 3 other автор(ы). IRPS, стр. 5. IEEE, (2018)A Novel Method for the Determination of Electromigration-Induced Void Nucleation Stresses., , , , , , , , , и 1 other автор(ы). IRPS, стр. 10. IEEE, (2024)A 220-mm2, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture., , , , , , , , , и 4 other автор(ы). IEEE J. Solid State Circuits, 33 (11): 1711-1719 (1998)