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19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot.

, , , , , , , , , , and . ISSCC, page 306-308. IEEE, (2020)

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Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K., , , , , , , , , and . IRPS, page 7. IEEE, (2022)19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot., , , , , , , , , and 1 other author(s). ISSCC, page 306-308. IEEE, (2020)SOI CMOS technology for quantum information processing., , , , , , , , , and 5 other author(s). ICICDT, page 1-4. IEEE, (2017)Specificities of linear Si QD arrays integration and characterization., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 415-416. IEEE, (2022)Towards scalable silicon quantum computing., , , , , , , , , and 7 other author(s). DRC, page 1-2. IEEE, (2018)Semiconductor qubits in practice, , , , , and . Nature Reviews Physics, 3 (3): 157-177 (Mar 1, 2021)Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology., , , , , , , , , and 6 other author(s). ESSCIRC, page 45-48. IEEE, (2022)Si MOS technology for spin-based quantum computing., , , , , , , , , and 7 other author(s). ESSDERC, page 12-17. IEEE, (2018)The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire., , , , , , , , , and 2 other author(s). ESSDERC, page 147-150. IEEE, (2013)