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A novel GaN HEMT degradation mechanism observed during HTST test., , , and . IRPS, page 4-1. IEEE, (2018)Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs., , , , , , , , , and 7 other author(s). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs., , , , , , , and . IRPS, page 1-5. IEEE, (2020)Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs., , , , , , , , and . IRPS, page 5. IEEE, (2022)A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps., , and . ESSDERC, page 372-375. IEEE, (2022)On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs., , , , , , , , , and 7 other author(s). Microelectron. Reliab., (2018)Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs., , , , , and . IRPS, page 1-5. IEEE, (2021)Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications., , and . IRPS, page 11. IEEE, (2022)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)