%0 Conference Paper %1 8268349 %A Daus, A. %A Han, S. %A Knobelspies, S. %A Cantarella, G. %A Vogt, C. %A Münzenrieder, N. %A Tröster, G. %B 2017 IEEE International Electron Devices Meeting (IEDM) %D 2017 %K myown %P 8.1.1-8.1.4 %R 10.1109/IEDM.2017.8268349 %T Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors %U https://ieeexplore.ieee.org/document/8268349/ %X Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

@inproceedings{8268349, abstract = {Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.}, added-at = {2023-05-22T12:04:12.000+0200}, author = {Daus, A. and Han, S. and Knobelspies, S. and Cantarella, G. and Vogt, C. and Münzenrieder, N. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/28f6d693368c680931c2d19b6e9f7efb4/nikomu}, booktitle = {2017 IEEE International Electron Devices Meeting (IEDM)}, doi = {10.1109/IEDM.2017.8268349}, interhash = {1723fc18d738490dbc58c982a20abb02}, intrahash = {8f6d693368c680931c2d19b6e9f7efb4}, issn = {2156-017X}, keywords = {myown}, month = dec, pages = {8.1.1-8.1.4}, timestamp = {2023-05-22T12:04:12.000+0200}, title = {Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors}, url = {https://ieeexplore.ieee.org/document/8268349/}, year = 2017 }