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Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors

, , , , , , and . 2017 IEEE International Electron Devices Meeting (IEDM), page 8.1.1-8.1.4. (December 2017)
DOI: 10.1109/IEDM.2017.8268349

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20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas, , , , , , , , , and . 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), page 142-144. (August 2015)Flexible In–Ga–Zn–O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain, , , , , , , and . IEEE Electron Device Letters, 36 (8): 781-783 (August 2015)A fully integrated audio amplifier in flexible a-IGZO TFT technology for printed piezoelectric loudspeakers, , , , , , , , , and . 2015 European Conference on Circuit Theory and Design (ECCTD), page 1-4. (August 2015)Fabrication technologies for the integration of thin-film electronics into smart textiles, , , , and . Multidisciplinary Know-How for Smart-Textiles Developers, Woodhead Publishing, (2013)3.5mW 1MHz AM detector and digitally-controlled tuner in a-IGZO TFT for wireless communications in a fully integrated flexible system for audio bag, , , , , , , , , and 6 other author(s). 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), page 1-2. (June 2016)Flexible Bootstrapped Cascode System with Feedback for Capacitive Through-Substrate Electric Potential Measurements with a 55 dB Relative Gain, , , , and . 2020 IEEE International Electron Devices Meeting (IEDM), page 14.4.1-14.4.4. (December 2020)Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment, , , , , and . Solid-State Electronics, (2018)Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study, , , , , , , , , and . IEEE Electron Device Letters, 37 (12): 1582-1585 (December 2016)Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology, , , , , , , , , and . Analog Integrated Circuits and Signal Processing, 87 (2): 213--222 (May 1, 2016)Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors, , , , , , and . 2017 IEEE International Electron Devices Meeting (IEDM), page 8.1.1-8.1.4. (December 2017)