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Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors

, , , , , , and . 2017 IEEE International Electron Devices Meeting (IEDM), page 8.1.1-8.1.4. (December 2017)
DOI: 10.1109/IEDM.2017.8268349

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Flexible In–Ga–Zn–O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain, , , , , , , and . IEEE Electron Device Letters, 36 (8): 781-783 (August 2015)Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters, , , , , , , , , and 2 other author(s). 2014 IEEE International Electron Devices Meeting, page 26.4.1-26.4.4. (December 2014)3–5 V, 3–3.8 MHz OOK modulator with a-IGZO TFTs for flexible wireless transmitter, , , , , , , , and . 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), page 1-4. (November 2017)Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment, , , , , and . Solid-State Electronics, (2018)Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study, , , , , , , , , and . IEEE Electron Device Letters, 37 (12): 1582-1585 (December 2016)Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors, , , , , , and . 2017 IEEE International Electron Devices Meeting (IEDM), page 8.1.1-8.1.4. (December 2017)Bendable Printed and Thin-film Electronics for Wireless Communications, , , , , , , , , and 4 other author(s). 2018 2nd URSI Atlantic Radio Science Meeting (AT-RASC), page 1-4. (May 2018)Radio frequency electronics in a-IGZO TFT technology, , , , , , , , , and 1 other author(s). 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), page 273-276. (July 2016)The Reliability of Periodically Repaired n - l/n Parallel Redundant Systems.. IEEE Trans. Computers, 32 (6): 597-598 (1983)