%0 Journal Article %1 WOS:000224739100099 %A de Sousa, JS %A Freire, VN %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2004 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K SiC; anisotropy} band dots; structure {quantum %N 1-4 %P 553-558 %R 10.1016/j.apsusc.2004.06.110 %T Conduction band anisotropy effects on the confined electron states of SiC/SiO2 quantum dots %V 237 %X The effects of full anisotropy of the silicon carbide (SiC) band structure together with alignment of the conduction band valleys, nanocrystal geometry, and external field, upon 4H-and 6H-SiC polytypes is addressed in this work. Our calculations show that the combination of shape, electric field direction and band structure anisotropy may have strong consequences for confined electron energies SiC nanocrystals (NCs). The break of degeneracy under specific conditions will influence the design of device applications and advances in SiC nanocrystal-based technology. (C) 2004 Elsevier B.V. All rights reserved.

@article{WOS:000224739100099, abstract = {The effects of full anisotropy of the silicon carbide (SiC) band structure together with alignment of the conduction band valleys, nanocrystal geometry, and external field, upon 4H-and 6H-SiC polytypes is addressed in this work. Our calculations show that the combination of shape, electric field direction and band structure anisotropy may have strong consequences for confined electron energies SiC nanocrystals (NCs). The break of degeneracy under specific conditions will influence the design of device applications and advances in SiC nanocrystal-based technology. (C) 2004 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {de Sousa, JS and Freire, VN and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2f6ccda642dd87bea090ac069c4eea351/ppgfis_ufc_br}, doi = {10.1016/j.apsusc.2004.06.110}, interhash = {c5dbc046641de5c8f67ffb30f99b5a22}, intrahash = {f6ccda642dd87bea090ac069c4eea351}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {SiC; anisotropy} band dots; structure {quantum}, note = {7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003}, number = {1-4}, organization = {Japan Soc Appl Phys; Minist Educ, Culture, Sports, Sci & Technol; Commemorat Assoc Japan World Exposit 1970; Natl Inst Mat Sci; Nara Convent Bur}, pages = {553-558}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Conduction band anisotropy effects on the confined electron states of SiC/SiO2 quantum dots}, tppubtype = {article}, volume = 237, year = 2004 }