Abstract
The effects of full anisotropy of the silicon carbide (SiC) band
structure together with alignment of the conduction band valleys,
nanocrystal geometry, and external field, upon 4H-and 6H-SiC polytypes
is addressed in this work. Our calculations show that the combination of
shape, electric field direction and band structure anisotropy may have
strong consequences for confined electron energies SiC nanocrystals
(NCs). The break of degeneracy under specific conditions will influence
the design of device applications and advances in SiC nanocrystal-based
technology. (C) 2004 Elsevier B.V. All rights reserved.
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