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Disambiguation of "de Sousa, JS"

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Conduction band anisotropy effects on the confined electron states of SiC/SiO2 quantum dots

, , and . APPLIED SURFACE SCIENCE, 237 (1-4): 553-558 (2004)7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003.
DOI: 10.1016/j.apsusc.2004.06.110

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Theresa de Sousa

Ágabo Borges de Sousa

Erwin Jssler

Gideon Sousa

Carlos Sousa

 

Other publications of authors with the same name

Recombination energy changes due to shell-like defects in Si/SiO2 quantum dots, , , and . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4): 73-76 (2003)International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002.Effects of crystallographic orientations on the charging time in silicon nanocrystal flash memories, , , , and . APPLIED PHYSICS LETTERS, 82 (16): 2685-2687 (2003)Blue light emission from confined excitons in SiC/SiO2 quantum wells and wires, , , , and . JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 39 (3): 443-446 (2001)International Conference on Superlattices Microstructures and Microdevices 2000, KYONGJU, SOUTH KOREA, SEP 25-27, 2000.Interface-related restriction to potential depth estimates for single Si/SiO2 quantum wells, , , and . JOURNAL OF PHYSICS-CONDENSED MATTER, 11 (8): 1927-1934 (1999)Strong interface effects in graded SiO2/Si/SiO2 quantum wells, , , and . JOURNAL OF APPLIED PHYSICS, 84 (9): 5369-5371 (1998)The impact of high-k dielectrics in nanocrystal flash memories, and . Quantum Sensing and Nanophotonic Devices II, volume 5732 of PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), page 547-555. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.The influence of graded interfaces in the electronic spectrum of nanometer silicon dots, , , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 166-170 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Differences of Stark shift behavior in Si/SiO2 quantum wells and quantum dots, , , and . APPLIED SURFACE SCIENCE, 237 (1-4): 548-552 (2004)7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003.Conduction band anisotropy effects on the confined electron states of SiC/SiO2 quantum dots, , and . APPLIED SURFACE SCIENCE, 237 (1-4): 553-558 (2004)7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003.Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells, , , and . APPLIED SURFACE SCIENCE, 166 (1-4): 336-340 (2000)7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999.